@misc{Kamiński_Paweł_Głębokie_1993,
 author={Kamiński Paweł},
 volume={21},
 editor={Dobrzański Lech},
 editor={Kozłowski Roman},
 number={4},
 copyright={Rights Reserved - Free Access},
 journal={Electronic Materials},
 address={Warszawa},
 howpublished={online},
 year={1993},
 publisher={ITME},
 language={pol},
 title={Głębokie centra defektowe w warstwie czynnej tranzystorów MESFET = Deep defect centres in active layer of MESFETs},
 type={Text},
 URL={http://rcin.org.pl/Content/13748/PDF/WA901_14330_M1_r1993-t21-z4_Mater-Elektroniczne_Kamimski_i.pdf},
 keywords={Electronic - materials, Electronic - journal - materials, deep defect centre, GaAs, MESFET},
}