@misc{Mirowska_Aleksandra_Domieszkowanie_2010,
 author={Mirowska Aleksandra},
 volume={38},
 editor={Orłowski Wacław},
 number={1},
 copyright={Rights Reserved - Free Access},
 address={Warszawa},
 journal={Electronic Materials},
 howpublished={online},
 year={2010},
 publisher={ITME},
 language={pol},
 type={Text},
 title={Domieszkowanie monokryształów antymonku galu na typ przewodnictwa n oraz na typ p = Doping gallium antimonide single crystals for n-type and p-type conductivity},
 URL={http://rcin.org.pl/Content/18068/PDF/WA901_16469_M1_r2010-t38-z1_Mater-Elektron-Mir_i.pdf},
 keywords={GaSb, doping, Te, Si, Zn, dopant concentration, Cz method, GDMS, Electronic - materials, Electronic - journal - materials},
}