TY - GEN N1 - 12-18 s. : il. ; 24 cm. L1 - http://rcin.org.pl/Content/11879/PDF/WA901_14200_M1_r1992-t20-z4_Mater-Elektroniczne_Nossarzewska_i.pdf M3 - Text J2 - Materiały Elektroniczne 1992 T.20 nr 4 PY - 1992 IS - 4 EP - 18 KW - Electronic - materials KW - epitaxial layer KW - minority carrier lifetime A1 - Nossarzewska-Orłowska Elżbieta A2 - Kamiński Paweł A2 - Sarnecki Jerzy A2 - Kozłowski Roman PB - ITME VL - 20 CY - Warszawa SP - 12 T1 - Characterization of epitaxial silicon for MOS VLSI IC by deep level transsient spectroscopy and minority carrier lifetime measurements = UR - http://rcin.org.pl/dlibra/publication/edition/11879 ER -