Object structure
Title:

Wyznaczanie koncentracji centrów defektowych w półprzewodnikach wysokorezystywnych na powstawie prążków widmowych Laplace'a otrzymywanych w wyniku analizy relaksacyjnych przebiegów fotoprądu = Determining defect center concentration in high-resistivity semiconductors from the Laplace spectral fringes obtained by the analysis of the photocurrent relaxation waveforms

Subtitle:

Materiały Elektroniczne 2012 T.40 nr 1

Creator:

Kozłowski Roman

Contributor:

Kamiński Paweł ; Żelazko Jarosław

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

2012

Description:

19-33 s. : il. 30 cm. ; Bibliogr. s. 33

Subject and Keywords:

Electronic - materials ; Electronic - journal - materials ; HRPITS ; radiation defect centres ; siatki metalowe ; Laplace'a procedure

Relation:

Electronic Materials

Volume:

40

Issue:

1

Start page:

19

End page:

33

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open

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