Institute of Electronic Materials Technology

Investigation of the defect structure in the new types of undoped and Pr-doped scintillator single crystals of mixed lutetium-yttrium-aluminum garnets [LuxY1-x]Al5O12 (LuYAG)

Malinowska Agnieszka

2015

Text

Erbium, ytterbium and chromium doped phosphate laser

Podniesiński Dariusz

2015

Text

Spis treści. T.43 Nr 1 [2015]

Materiały Elektroniczne

2015

Text

X-ray diffraction topography of lattice defects in MgAl2O4 and ScAlMgO4 crystals grown under different technological conditions

Wierzbicka Edyta

2015

Text

Electrical properties of nitrogen-enriched silicon single crystals

Kamiński Paweł

2015

Text

Influence of the CONTIN numerical procedure parameters on the shape of the spectral fringes obtained through the analysis of the temperature changes of the photocurrent relaxation waveforms

Żelazko Jarosław

2015

Text

Polymer luminescent concentrators containing oxide nanocrystals doped with rare-earth elements matched to an edge-illuminated silicon solar cell

Sarnecki Jerzy

2015

Text

InP nanowires for photovoltaic applications

Dumiszewska Ewa

2015

Text

Spis treści. T. 43 Nr 4 [2015]

Materiały Elektroniczne

2015

Book/Chapter

Hydrophobic organic layers on smooth and 3-dimensional developed surfaces

Stańczyk Beata

2015

Text

Mechanical properties of graphene flake-reinforced Y2O3 ceramics

Boniecki Marek

2015

Text

Towards improvement of beam quality of wide-stripe high-power laser diodes

Maląg Andrzej

2015

Text

Acoustic plate modes in GaN crystal plates cut perpendicularly to crystallographic Z axis

Sadura Jolanta

2015

Text

Spis treści. T. 43 Nr 3 [2015]

Materiały Elektroniczne

2015

Text

Analysis of crystal lattice deformation in the vicinity of dislocation

Jóźwik Przemysław

2015

Text

Selection of parameters used in thermal reduction process of nanosilver powder precursor aimed at obtaining optimal structure of silver crystallites

Pawłowski Radosław

2015

Book/Chapter

Solution growth of 3C-SiC by TSSG method

Raczkiewicz Marcin

2015

Text

Spis treści. T.43 Nr 2 [2015]

Electronic Materials

2015

Text

Filters

Search for: [Date issued/created = 2015.01.01 - 2015.12.31]

Number of results: 18

Investigation of the defect structure in the new types of undoped and Pr-doped scintillator single crystals of mixed lutetium-yttrium-aluminum garnets [LuxY1-x]Al5O12 (LuYAG)

Erbium, ytterbium and chromium doped phosphate laser

Spis treści. T.43 Nr 1 [2015]

X-ray diffraction topography of lattice defects in MgAl2O4 and ScAlMgO4 crystals grown under different technological conditions

Electrical properties of nitrogen-enriched silicon single crystals

Influence of the CONTIN numerical procedure parameters on the shape of the spectral fringes obtained through the analysis of the temperature changes of the photocurrent relaxation waveforms

Polymer luminescent concentrators containing oxide nanocrystals doped with rare-earth elements matched to an edge-illuminated silicon solar cell

InP nanowires for photovoltaic applications

Spis treści. T. 43 Nr 4 [2015]

Hydrophobic organic layers on smooth and 3-dimensional developed surfaces

Mechanical properties of graphene flake-reinforced Y2O3 ceramics

Towards improvement of beam quality of wide-stripe high-power laser diodes

Acoustic plate modes in GaN crystal plates cut perpendicularly to crystallographic Z axis

Spis treści. T. 43 Nr 3 [2015]

Analysis of crystal lattice deformation in the vicinity of dislocation

Selection of parameters used in thermal reduction process of nanosilver powder precursor aimed at obtaining optimal structure of silver crystallites

Solution growth of 3C-SiC by TSSG method

Spis treści. T.43 Nr 2 [2015]

Technical contact

Address

Sitemap

Main page

Collections

Indexes

About project

User's account

Recently viewed

Financing:

Project I

Project II

Partners funds

Partnership:

Website created by