Institute of Electronic Materials Technology

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- ITME works (1)
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Changing optical and electrical parameters of laser diodes (LDs) emitting at 808 nm and 880 nm during continuous operation

Dąbrowska Elżbieta

2014

Book/Chapter

Epitaksja GaP/GaP z fazy gazowej dla przyrządów emitujących swiatło żółto-zielone. Własności strukturalne i elektrooptyczne = Vapour phase epitaxy for devices emitting the yellow-green light the structural and electrooptical properties

Strupiński Włodzimierz

1985

Text

Model of ageing process of electroluminescent structures = model procesu starzenia struktur elektroluminescencyjnych

Porada Zbigniew

2009

Text

Warunki generacji promieniowania w cynkowych warstwach dyfuzyjnych z arsenku galu = The conditions of radiation generation in gallium arsenide with differee layer

Pietras Edward

1978

Text

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