Institute of Electronic Materials Technology

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- Text (8)
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- Electronic Materials (7)
- ITME works (1)
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Preparation of a BiTeI polar semiconductor with a strong asymmetric inversion / Andrzej Materna.

Materna Andrzej

2017

Book/Chapter

Selection of parameters used in thermal reduction process of nanosilver powder precursor aimed at obtaining optimal structure of silver crystallites

Pawłowski Radosław

2015

Book/Chapter

Generacja defektów w czasie dyfuzji cynku do arsenku galu = Generation of defects during zinc diffusion in gallium arsenide

Pietras Edward

1975

Text

Wyznaczanie wewnętrznej sprawności kwantowej rekombinacji promienistej w monokrystaliczny GaAs z pomiarów fotoluminescencji heterostruktur GaAs-AlxGa1-xAs = Determination of internal quantum efficiency of radiative recombination in GaAs single crystals from photoluminescence measurements of GaAs-AlxGa1-xAs heterostructures

Bugajski Maciej Jagoda Andrzej Szymański Leszek

1976

Text

Wpływ warunków polerowania na chropowatość powierzchni płytek krzemowych = Influence of polishing condictins on surface roughness of silicon wafers

Czerwińska Anna

1978

Text

The use of thermal mapping in evaluation of mechanically induced electrical degradation of graphene - based transparent heaters

Kozłowska Anna

2017

Book/Chapter

Characterization of epitaxial silicon for MOS VLSI IC by deep level transsient spectroscopy and minority carrier lifetime measurements =

Nossarzewska-Orłowska Elżbieta

1992

Text

Półizolacyjny arsenek galu (SI-GaAs) dla tranzystorów polowych i układów scalonych = Semi-insulating gallium arsenide (SI-GaAs) for MESFET's and integrated circuits

Hruban Andrzej

1990

Text

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