Title:

Zastosowanie transmisyjnej topografii rentgenowskiej w nierównoległym układzie spektrometru dwukrystalicznego do badania homoepitaksjalnych warstw Si = Application of transmission X-ray topography in the non-parallel system of biocrystal spectrometer for homoepitaxial Si layers investigations

Subtitle:

Materiały Elektroniczne 1974 nr 5

Creator:

Sass Jerzy

Publisher:

Wydaw. Przemysłu Maszynowego "WEMA"

Place of publishing:

Warszawa

Date issued/created:

1974

Description:

s. 7-13 : il. ; 24 cm. ; Bibliogr. s. 13

Subject and Keywords:

Electronic- materials ; Electronic - journal - materials ; transmission x-ray topography ; Si ; homoepitaxial Si layer

Relation:

Electronic Materials

Issue:

5

Start page:

7

End page:

13

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open