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Title: Wpływ gęstości dyslokacji na strukturę defektową warstw epitaksjalnych GaAs0.6:Te = Dislocation effect on electron trap concentration in Te-doped GaAs0.6P0.4

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Last modified:

Oct 2, 2020

In our library since:

Aug 6, 2012

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670

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https://rcin.org.pl/itme/publication/12450

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