Title:

Wpływ gęstości dyslokacji na strukturę defektową warstw epitaksjalnych GaAs0.6:Te = Dislocation effect on electron trap concentration in Te-doped GaAs0.6P0.4

Subtitle:

Materiały Elektroniczne 1986 nr 1(53)

Creator:

Kamiński Paweł

Contributor:

Sroczyński Paweł ; Surma Barbara

Publisher:

Wydaw. Przemysłu Maszynowego "WEMA"

Place of publishing:

Warszawa

Date issued/created:

1986

Description:

s. 7-14 : il. ; 24 cm. ; Bibliogr. s. 14

Subject and Keywords:

Electronic - journal - material ; Electronic materials ; dislocation density ; defect ; GaAsP:Te ; epitaxy layer

Relation:

Electronic Materials

Volume:

53

Issue:

1

Start page:

7

End page:

14

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open