MMIC'S on gallium arsenide developed in the Institute of Electronic Materials Technology - Institute of Electronic Materials Technology

Skip to main menu
Skip to search engine
Skip to content
Skip to footer

MMIC'S on gallium arsenide developed in the Institute of Electronic Materials Technology

Download

Title: MMIC'S on gallium arsenide developed in the Institute of Electronic Materials Technology

Creator:

Dobrzański Lech

Date issued/created:

Resource type:

Subtitle:

Materiały Elektroniczne 1992 T.20 nr 4

Contributor:

Marciniak Wiesław

Publisher:

Place of publishing:

Description:

19-22 s. : il. ; 24 cm.

Relation:

Electronic Materials

Volume:

Issue:

Start page:

End page:

Detailed Resource Type:

Format:

application/pdf

Resource Identifier:

oai:rcin.org.pl:11880

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Subject and keywords:

Electronic - materials GaAs MMIC

Object collections:

Łukasiewicz Research Network - Institute of Microelectronics and Photonics > Electronic Materials

Last modified:

Oct 2, 2020

In our library since:

Aug 29, 2012

Number of object content downloads / hits:

257

All available object's versions:

https://rcin.org.pl/itme/publication/14201

Show description in RDF format:

Show description in RDFa format:

Show description in OAI-PMH format:

MATERIAŁY ELEKTRONICZNE

Edition name	Date
Dobrzański Lech, MMIC'S on gallium arsenide developed in the Institute of Electronic Materials Technology	Oct 2, 2020

Objects Similar

Układy scalone z arsenku galu = GaAs integrated circuits

Marciniak Wiesław

1990

Text

Arsenek galu : z doświadczeniem ku przyszłości = Gallium arsenide: with experience towards future

Rosiński Witold

1990

Text

Metody charakteryzacji półizolacyjnych monokryształów GaAs = Methods of semi-insulating GaAs monocrystals characterisation

Strzelecka Stanisława

1992

Text

Deterministyczny, stałoprądowy model empiryczny oraz model statystyczny tranzystora MESFET z arsenku galu. = Deterministric, constant current empirical model and statistical model of GaAs MESFET

Dobrzański Lech

1993

Text

Swiatowy stan technologii otrzymywanych monokryształów objętościowych arsenku galu = World state technololgy of GaAs bulk single-crystal growing

Milwidskij M.G.

1976

Text

Charakteryzacja arsenku galu na tranzystory MESFET = GaAs diagnostics for MESFET's

Kot Waldemar

1990

Text

Heteroepitaksjalne struktury GaAs-Si = GaAs-Si heteroepitaxial structures

Tomaszewski Jacek

1990

Text

Defekty strukturalne w monokryształach GaAs o niskiej gęstości dyslokacji = Structural defects in low-dislocation GaAs single crystals

Pawłowska Marta

1988

Text

More

Citation style:

iso690-author-date apa modern-language-association chicago-author-date

This page uses 'cookies'. More information