Title:

Wzrost politypu 4H na podłożu o strukturze 6H w procesie monokrystalizacji SiC metodą transportu fizycznego z fazy gazowej. Rozprawa doktorska

Subtitle:

Praca doktorska.

Creator:

Tymicki Emil

Contributor:

Grasza, Krzysztof : Promotor

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

2011

Description:

135 s. il. ; 30 cm ; Bibliogr. 119-135

Subject and Keywords:

Electronic - materials ; 4H-SiC ; 6H-SiC ; PVT

Relation:

PhD. Dissertations

Resource type:

Text

Detailed Resource Type:

PhD Dissertations

Format:

application/pdf

Source:

ITME, sygn. P/2370 ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Institute of Electronic Materials Technology

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open