Search for: [Abstract = "Hexagonal boron nitride \(h\-BN\) is an attractive material for applications in electronics. The technology of devices basedon BN requires non\-destructive and fast methods of controlling the parameters of the produced layers. Boron nitride layersof different thickness were grown on sapphire substrates \(Al2O3\) using the MOCVD method. The obtained films werecharacterized by FT\-IR spectroscopy using IRR and ATR techniques and by the XRR and SEM methods. We showed thatby analyzing the ATR or reflectance spectrum in the range of 600\-2500 cm\-1 we can measure the thickness of a BN layeron the Al2O3 substrate. Our measuring method allows measuring the layers with a thickness from \~2 nm to approx. 20 nm."]

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