Możdżonek Małgorzata ; Caban Piotr ; Gaca Jarosław ; Wójcik Marek ; Piątkowska Anna
Wyznaczanie grubości warstw BN na podłożu Al2O3 za pomocąspektroskopii FT-IR
Hexagonal boron nitride (h-BN) is an attractive material for applications in electronics. The technology of devices basedon BN requires non-destructive and fast methods of controlling the parameters of the produced layers. Boron nitride layersof different thickness were grown on sapphire substrates (Al2O3) using the MOCVD method. The obtained films werecharacterized by FT-IR spectroscopy using IRR and ATR techniques and by the XRR and SEM methods. We showed thatby analyzing the ATR or reflectance spectrum in the range of 600-2500 cm-1 we can measure the thickness of a BN layeron the Al2O3 substrate. Our measuring method allows measuring the layers with a thickness from ~2 nm to approx. 20 nm.
ITME, sygn. dostępny ; click here to follow the link
Institute of Electronic Materials Technology
Library of the Institute of Electronic Materials Technology
Activities popularizing science (DUN) ; Ministry of Science and Higher Education
Jan 22, 2021
Jan 22, 2021
214
https://rcin.org.pl/itme/publication/190436
Edition name | Date |
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Możdżonek Małgorzata, 2020, Determination of the thickness of BN layers on the Al2O3substrate by FT-IR spectroscopy15 | Jan 22, 2021 |
Tomaszewski Henryk
Sterma Franciszek
Morawski Jerzy
Jakowlew Bolesław
Boniecki Marek
Pietrzak Katarzyna
Bukat Andrzej