Optymalizacja profilu koncentracji domieszki w warstwach GaAs otrzymywanych metodami MOVPE i HVPE = Optimalization of doping profile in GaAs epilayers obtained by MOVPE and HVPE methods - Digital Repository of Scientific Institutes

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Title: Optymalizacja profilu koncentracji domieszki w warstwach GaAs otrzymywanych metodami MOVPE i HVPE = Optimalization of doping profile in GaAs epilayers obtained by MOVPE and HVPE methods

Creator:

Strupiński Włodzimierz

Date issued/created:

Resource type:

Subtitle:

Materiały Elektroniczne 1993 T.21 nr 1

Publisher:

Place of publishing:

Description:

17-26 s. : il. ; 24 cm. ; Bibliogr. s. 25-26

Relation:

Electronic Materials

Volume:

Issue:

Start page:

End page:

Detailed Resource Type:

Format:

application/pdf

Resource Identifier:

oai:rcin.org.pl:13661

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Subject and keywords:

Electronic - materials Electronic - journal - materials epitaxy GaAs doping profile

Object collections:

Last modified:

Oct 2, 2020

In our library since:

Sep 19, 2012

Number of object content downloads / hits:

513

All available object's versions:

https://rcin.org.pl/publication/14239

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MATERIAŁY ELEKTRONICZNE

Edition name	Date
Strupiński Włodzimierz, Optymalizacja profilu koncentracji domieszki w warstwach GaAs otrzymywanych metodami MOVPE i HVPE	Oct 2, 2020

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iso690-author-date apa modern-language-association chicago-author-date

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